| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| AOD2916 | 其他被动元件 |
AOS/万代 |
TO-252 |
19+ |
8888050 |
|||
| AON7566 | 贴片三极管 |
AOS/万代 |
DFN3x3EP |
19+ |
8888050 |
|||
| AON6932A | 其他被动元件 |
AOS/万代 |
DFN5x6B |
19+ |
8888050 |
|||
| AON6548 | 其他被动元件 |
AOS/万代 |
DFN5x6 |
19+ |
8888050 |
|||
| AOD482 | MOS(场效应管) |
AOS/万代 |
TO-252 |
19+ |
8888050 |
|||
| AON6413 | 低压MOS管 |
AOS/万代 |
DFN5x6 |
19+ |
8888050 |
|||
| AO4296 | MOS(场效应管) |
AOS/万代 |
SOP-8 |
19+ |
8888050 |
|||
| AON6232 | 其他被动元件 |
AOS/万代 |
DFN5x6 |
19+ |
8888050 |
|||
| AON7544 | 其他被动元件 |
AOS/万代 |
DFN3*3 |
20+ |
99999999 |
|||
| AON7466 | MOS(场效应管) |
AOS/万代 |
DFN3x3EP |
19+ |
8888050 |
|||
| AO4803 | MOS(场效应管) |
AOS/万代 |
SOP-8 |
18+ |
88886600 |
|||
| AO4486 | 其他被动元件 |
AOS/万代 |
SOP-8 |
19+ |
8888050 |
|||
| AO4884 | 其他被动元件 |
AOS/万代 |
SOP-8 |
18+ |
88886600 |
|||
| AO4411 | MOS(场效应管) |
AOS/万代 |
SOP-8 |
19+ |
8888050 |
|||
| AOD526 | MOS(场效应管) |
AOS/万代 |
TO-252 |
19+ |
8888050 |
|||
| FDMB2308PZ | MOS(场效应管) |
ONSEMI/安森美 |
24+ |
16090 |
||||
| AO4606 | AOS/万代 |
SOP-8 |
25+ |
88886600 |
||||
| IMWH170R1K0M1 | MOS(场效应管) |
jcwsemi/嘉灿微半导体 |
PG-TO247-3 |
25+ |
15001 |
|||
| IMWH170R450M1 | MOS(场效应管) |
jcwsemi/嘉灿微半导体 |
PG-TO247-3 |
25+ |
15001 |
|||
| IMZA65R027M1H | MOS(场效应管) |
jcwsemi/嘉灿微半导体 |
TO247-4 |
25+ |
15001 |
|||
| IMW65R027M1H | MOS(场效应管) |
jcwsemi/嘉灿微半导体 |
TO247-3 |
25+ |
15001 |
|||
| IMW65R030M1H | MOS(场效应管) |
jcwsemi/嘉灿微半导体 |
TO247-3 |
25+ |
15001 |
|||
| YJG2D7G06A | MOS(场效应管) |
Jcwsemi |
PDFN3*3 |
25+ |
100000 |
|||
| 15P04 | MOS(场效应管) |
JCW/嘉灿微 |
TO-252-3L |
25+ |
988800 |
|||
| 30P03 | MOS(场效应管) |
JCW/嘉灿微 |
PDFN33-8 |
25+ |
988800 |
|||
| 50P03 | MOS(场效应管) |
JCW/嘉灿微 |
PDFN33-8 |
25+ |
988800 |
|||
| AOD418 | MOS(场效应管) |
JCW |
TO-252 |
25+ |
8888050 |
|||
| AOD442 | MOS(场效应管) |
JCW |
TO-252 |
25+ |
8888050 |
|||
| 4953 | MOS(场效应管) |
国产 |
SOP-8 |
25+ |
9990000 |
|||
| 4606 | MOS(场效应管) |
国产 |
SOP-8 |
25+ |
900000 |