| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| VS3618BE | MOS(场效应管) |
JCW/嘉灿微 |
DFN3*3 |
23+ |
85960 |
|||
| AO4812 | 低压MOS管 |
JCW/嘉灿微 |
SOP-8 |
23+ |
999999 |
|||
| RU207C | 功率二极管 |
JCW/嘉灿微 |
23+ |
33000 |
||||
| AON6458 | N沟道MOS管 |
AOS/万代替代JCW |
DFN5x6 |
19+ |
8888050 |
|||
| KS4630MA/JCW20G04E | MOS(场效应管) |
JCW/嘉灿微 |
PDFN3*3 |
900000 |
||||
| KS4618NB/JCW20G04D | MOS(场效应管) |
JCW/嘉灿微 |
PDFN5*6 |
900000 |
||||
| KS6411NAT/JCW014FBD | MOS(场效应管) |
JCW/嘉灿微 |
PDFN5*6 |
900000 |
||||
| BSS127 H6327 | MOS(场效应管) |
JCW/嘉灿微 |
SOT23 |
900000 |
||||
| IP5306/UT5306 | 充电IC |
JCW/嘉灿微 |
SOP-8 |
900000 |
||||
| KS4445MAT/JCW013EBE | MOS(场效应管) |
JCW/嘉灿微 |
PDFN3*3 |
900000 |
||||
| IKZA75N120CH7 | IGBT模块 |
JCWSEMI |
TO-247-4 |
25+ |
50000 |
|||
| YJQ120N10B | MOS(场效应管) |
Jcwsemi |
PDFN3*3 |
24+ |
100000 |
|||
| WSD2018BDN22 | jcwsemi |
DFN2*2-6L |
24+ |
72000 |
||||
| WPM2006 | jcwsemi |
DFN2*2-6L |
24+ |
72000 |
||||
| C2M0160120D | jcwsemi |
TO247-3 |
24+ |
10000 |
||||
| C2M0011090D | jcwsemi |
TO247-3 |
24+ |
10000 |
||||
| IMZA75R020M1H | jcwsemi/嘉灿微半导体 |
PG-TO247-4 |
25+ |
15001 |
||||
| IMZA75R060M1H | jcwsemi/嘉灿微半导体 |
PG-TO247-4 |
25+ |
15001 |
||||
| AIMZA75R040M1H | jcwsemi/嘉灿微半导体 |
PG-TO247-4 |
25+ |
15001 |
||||
| IMZA120R014M1H | jcwsemi/嘉灿微半导体 |
TO247-3 |
25+ |
15001 |
||||
| IMW65R057M1H | jcwsemi/嘉灿微半导体 |
TO247-3 |
25+ |
15001 |
||||
| IMW65R072M1H | jcwsemi/嘉灿微半导体 |
TO247-3 |
25+ |
15001 |
||||
| AIMW120R080M1 | jcwsemi/嘉灿微半导体 |
TO247-3 |
25+ |
15001 |
||||
| AIMW120R035M1H | jcwsemi/嘉灿微半导体 |
TO247-3 |
25+ |
15001 |
||||
| IMW65R107M1H | jcwsemi/嘉灿微半导体 |
TO247-3 |
25+ |
15001 |
||||
| IMW120R007M1H | jcwsemi/嘉灿微半导体 |
TO247-3 |
25+ |
15001 |
||||
| SI2301A | 国产 |
SOT23-3 |
16+ |
9990000 |
||||
| AON6452 | 其他被动元件 |
AOS/万代 |
DFN5x6 |
19+ |
8888050 |
|||
| AO3418 | JCW |
SOT23-3 |
19+ |
8888050 |
||||
| VS3622DB | Vanguard/JCW |
DFN3x3 |
22+ |
99999 |